A new material for the electron-blocking layer of photonic devices

Scilight 2026

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Authors: Katherine De Lange

DOI: 10.1063/10.0043009

Cited by: 0

Abstract

AlScN can be lattice-matched to GaN and integrated into blue light-emitting diodes as the electron blocking layer

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Luminescence Properties of Advanced Materials