Effect of polarization Coulomb field scattering on GaN devices

Applied Physics Reviews 2026

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Authors: Zhaojun Lin, Heng Zhou, Yuanjie Lv, Peng Cui, Mingyan Wang, Chongbiao Luan, Jianzhi Zhao, Ming Yang, Chen Fu
DOI: 10.1063/5.0273085
Cited by: 1
References: 43

Abstract

We present a comprehensive review and analysis of the polarization Coulomb field (PCF) scattering theory in GaN heterostructure field-effect transistors (GaN HFETs), which include AlGaN/GaN HFETs and InAlN/GaN HFETs. This paper develops a theoretical framework for understanding PCF scattering in GaN HFETs and explores its application in various areas, including device modeling, channel electron velocity modulation, circuit performance optimization, and the analysis of split-gate AlGaN/GaN HFETs. Additionally, we investigate the potential applications of PCF scattering theory in polar dielectric semiconductor devices and underscore its broader scientific significance.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Applied Physics Reviews
Publisher
AIP Publishing
Volume
13
Issue
1
Publication date
2 January 2026
Language
EN