Origin of ferroelectricity and anti-ferroelectricity via doping and oxygen vacancy effects in lanthanum-doped hafnium zirconium oxide thin films

Applied Physics Letters 2026

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Authors: Jia-Cheng Li, Feng Wang, Hsiao‐Hsuan Hsu, Tian-Tong Cheng, Yu-Xi Yang, Qiang Li, Zhi-Wei Zheng
DOI: 10.1063/5.0289456
Cited by: 1
References: 31

Abstract

Lanthanum-doped hafnium zirconium oxide (La:HZO) has demonstrated high potential to solve the endurance challenge of hafnia-based ferroelectric memory. To date, La:HZO has been experimentally reported to exhibit ferroelectricity (FE) with lower La concentration (

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials Semiconductor materials and devices

Publication details

Journal / source
Applied Physics Letters
Publisher
AIP Publishing
Volume
128
Issue
1
Publication date
5 January 2026
Language
EN