Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension

APL Electronic Devices 2026 Open access

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Authors: Advait Gilankar, Julian Gervassi-Saga, Martha R. McCartney, Nabasindhu Das, Chinmoy Nath Saha, Yizheng Liu, David Malcolm McComas, David John Smith, Nidhin Kurian Kalarickal
DOI: 10.1063/5.0295311
Cited by: 1
References: 46

Abstract

In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates

Publication details

Journal / source
APL Electronic Devices
Publisher
AIP Publishing
Volume
2
Issue
1
Publication date
28 January 2026
Language
EN