Shallow trap dynamics and non-thermal spectral shift in sub-10- μ m InGaN micro-LEDs

Applied Physics Letters 2026

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Authors: Runan Zhang, Yujia Gong, Liang Zhang, Shulin Chen, Shuming Zhang, Jiahao Kang, Ze Yuan
DOI: 10.1063/5.0301981
Cited by: 1
References: 25

Abstract

Miniaturized InGaN micro-light-emitting diodes suffer reliability drifts that are not fully captured by conventional optical/electrical reporting. This study shows that, after 500-h direct current (DC) operation at 40 A cm−2, sub-10-μm devices exhibit a dominant-wavelength red-shift under fixed current that is non-thermal, as verified by

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Applied Physics Letters
Publisher
AIP Publishing
Volume
128
Issue
2
Publication date
12 January 2026
Language
EN