Origins of anisotropic linear magnetoresistance with isotropic mobility in Cd3As2 films on GaAs[110]
Abstract
Thin film synthesis allows for the potential to orient crystals in different orientations, permitting measurement of orientation-dependent material aspects such as band structures and transport anisotropy. Here, Dirac semimetal Cd3As2 films are epitaxially grown on GaAs[110] substrates, which has a [001] orientation in-plane. Films contain domains of two different c-axis orientations resulting from an aligned a-axis in-plane. Magnetoresistance measurements performed along both [11¯0] and [001] substrate directions reveal similar mobility and carrier concentration, but much larger magnetoresistance along the [001] direction, which can be explained by the guiding center diffusion model as arising from anisotropic disorder and different atomic spacings.
Fields of Study & Subjects
Topological Materials and Phenomena
Heusler alloys: electronic and magnetic properties
2D Materials and Applications
Publication details
- Journal / source
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Volume
- 139
- Issue
- 3
- Publication date
- 16 January 2026
- Language
- EN