Magnetotransport in high-mobility metamorphic InGaAs/InAlAs heterostructures with high InAs content
Abstract
Magnetotransport studies of high-mobility metamorphic heterostructures containing InxGax−1As quantum well (QW) with a high InAs content (x ≥ 0.85) have been carried out. The scattering rate can be effectively controlled by adjusting the spacer thickness between the QW and the δ-doping layer. By analyzing the temperature and angle dependences of the Shubnikov–de Haas oscillations, the effective mass m∗, the quantum lifetime τq, the effective g∗-factor, and the nature of the scattering potential were determined. Estimates were also carried out within the framework of the kp Kane model, which confirm a significant manifestation of nonparabolicity in the measured values of m∗.
Fields of Study & Subjects
Semiconductor Quantum Structures and Devices
Quantum and electron transport phenomena
ZnO doping and properties
Publication details
- Journal / source
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Volume
- 139
- Issue
- 9
- Publication date
- 5 March 2026
- Language
- EN