Tunable spin-to-charge conversion across semiconductor–semimetal transition in large-area PtSe2 thin films

High-speed and low-power spin–orbit torque (SOT) devices necessitate materials with high spin-to-charge conversion efficiency. Transition metal dichalcogenides (TMDs) have emerged as a promising platform for SOT research due to their topological features and band structure tunability. In this work, we fabricate large-area PtSe2 films via a two-step method and demonstrate a thickness-dependent semiconductor-to-semimetal transition. The spin-to-charge conversion efficiency of PtSe2 films exhibits an approximately sixty-fold enhancement across this semiconductor-to-semimetal transition. This work provides an alternative approach for modulating spin-to-charge conversion in TMDs and advances their potential applications in spintronics.