Conductance plateaus at quantum Hall integer filling factors in germanium quantum point contacts
Abstract
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here, we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantized conductance increasing in multiples of e2/h down to the first integer filling factor ν=1. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions.
Fields of Study & Subjects
Quantum and electron transport phenomena
Molecular Junctions and Nanostructures
Surface and Thin Film Phenomena
Publication details
- Journal / source
- Applied Physics Letters
- Publisher
- AIP Publishing
- Volume
- 128
- Issue
- 5
- Publication date
- 2 February 2026
- Language
- EN