Recent advances in contact resistivity at metal–semiconductor interfaces for post-Moore nanoscale devices
Abstract
Post-Moore nanoscale devices are driving the next wave of semiconductor advancement through three-dimensional architectures and material innovation. However, the shrinking source/drain contact area has made metal–semiconductor contact resistivity (ρc) a critical performance bottleneck. Conventional heavy doping techniques can no longer meet the stringent ρc requirement (
Fields of Study & Subjects
Semiconductor materials and interfaces
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- APL Electronic Devices
- Volume
- 2
- Issue
- 1
- Publication date
- 2 February 2026
- Language
- EN