Negative differential photoresistance for optically tunable resonator in a 2D Nb3I8 tunnel junction

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Authors: Hanchen Liu, Yao Wang, Jiaxin Wu, Junning Mei, Qi Sun, Yu Chen, Shuangxing Zhu, Kenji Watanabe, Takashi Taniguchi, Xinghan Cai
Cited by: 0
References: 41

Abstract

Negative differential resistance (NDR) offers a compact route to sustain and condition radio frequency resonators, and is also exploited in logic and neuromorphic circuits. However, electrically tunable NDR commonly trades tunability for circuit complexity, area, and power, constraining practical integration and fast reconfigurability. Here, we demonstrate optical control of negative differential photoresistance (NDPR) in a vertical two-dimensional tunnel junction based on Nb3I8 tunnel barrier. Under illumination, the photocurrent rises with bias and then falls beyond a threshold, forming a clear NDPR region. The effective negative photoresistance is continuously tuned by light power, and wavelength, spanning ∼−1 to −17 MΩ within our measurement window, while the device, as a photodetector, retains high sensitivity (responsivity up to ∼0.49 AW−1). Wavelength-dependent measurements indicate multiple photocurrent-generation pathways and suggest that the NDPR onset correlates with the Nb3I8's band structure. We further carry out simulations by integrating a lumped NDPR element into an LC oscillator circuit, which yields self-oscillation and effectively enhances the resonator quality factors. These results establish adjustable NDPR in a 2D van der Waals tunneling platform and enable light-programmable impedance for reconfigurable optoelectronics, suggesting promising potential for all-optical communication systems.

Fields of Study & Subjects

2D Materials and Applications Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Applied Physics Letters
Volume
128
Issue
6
Publication date
9 February 2026
Language
EN