Surface termination of β -Ga2O3(100) as-cleaved single crystals

The surface of β-Ga2O3 single crystals cleaved along their (100) plane is investigated using surface x-ray diffraction and atomic force microscopy. The results show the surface to consist of a single, so-called B-termination, which means that the crystal cleaves at planes formed by edge-sharing oxygen octahedra, thereby breaking the longest and weakest Ga–O bonds. Refinement of the atomic positions results in small displacements from the bulk structure, at most approximately 0.01 Å. Atomic force microscopy suggests that relatively large terraces form together with steps of half the a-axis length of approximately 0.6 nm, which means that terraces have the same atomic termination, related by the crystal symmetry. These results are important as a fundamental property of β-Ga2O3 when processed or used in various semiconductor applications.