Selective growth of single-crystal TIPS-pentacene on patterned PVDF-TrFE for geometry-controlled FeFETs with enhanced characteristics

We report geometry-controlled organic ferroelectric field-effect transistors (FeFETs) that combine patterned poly(vinylidene fluoride–trifluoroethylene) (PVDF–TrFE) ferroelectric lines with selectively grown single-crystalline 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) channels. The patterned PVDF–TrFE layers, fabricated via soft-lithography-assisted floating-transfer printing followed by melt-quenching and annealing, exhibit well-oriented β-phase crystallinity with stable polarization. Solvent-directed deposition of TIPS-PEN using a toluene/dodecane cosolvent enables anisotropic, ribbon-shaped single crystals precisely aligned along the ferroelectric geometry. The structural confinement of ferroelectric domains and the single-crystal semiconductor channel act synergistically to yield well-defined polarization hysteresis, higher ON current, and suppressed gate leakage. Surface-energy-guided growth studies on self-assembled monolayer-modified and topographic substrates reveal that selective nucleation occurs when the substrate surface energy matches or exceeds the solvent surface tension. These findings demonstrate a simple, low-temperature, and scalable approach for realizing geometry-controlled FeFETs with enhanced characteristics through the integration of ferroelectric domain alignment and single-crystal transport.