Structural and electronic features of epi-graphene on silicon carbide
Abstract
Epi-graphene is graphene grown by thermal decomposition of SiC. It is suitable for electronic applications, because wafer-scale single-orientation graphene can be directly grown on the semi-insulating substrate. The interface between graphene and the SiC substrate is characterized by the presence of the buffer layer. The electronic states of graphene are strongly affected by the atomic-scale interface modification, such as the rapid-cooling technique, twisting graphene layers, and hydrogen intercalation.
Fields of Study & Subjects
Graphene research and applications
2D Materials and Applications
Surface and Thin Film Phenomena
Publication details
- Journal / source
- AIP conference proceedings
- Volume
- 3466
- Pages
- 020003–020003
- Publication date
- 1 January 2026