High power and feedback-resilient single-state operation in an InAs/GaAs quantum dot laser

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Authors: Mingzhao SHI, Heming Huang, Mario Dumont, John Edward Bowers, Frédéric Grillot
Cited by: 0
References: 18

Abstract

This paper demonstrates the exceptional optical feedback resilience of an InAs/GaAs quantum dot Fabry–Pérot laser, enabled by an unusually large excited state to ground-state threshold current ratio. This wide separation effectively suppresses gain competition and nonlinear coupling, allowing the device to maintain spectral purity and dynamic stability under optical feedback levels up to 16.6%, even when biased at 50 times the ground-state threshold current at room temperature. These findings further highlight the intrinsic robustness of quantum dot lasers, still positioning them as promising candidates for isolator-free operation in silicon photonics and co-packaged optics platforms, as well as for low-noise and feedback-resilient photonic systems.

Fields of Study & Subjects

Semiconductor Lasers and Optical Devices Semiconductor Quantum Structures and Devices Photonic and Optical Devices

Publication details

Journal / source
Applied Physics Letters
Volume
128
Issue
8
Publication date
23 February 2026
Language
EN