Back-barrier-induced fast transient trapping and threshold voltage instability in AlGaN/AlN/GaN HEMTs

AIP Advances 2026 Open access

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Authors: Felix Kim, A. K. Ray, Hyuk-Min Kwon, Donald Y.C. Lie
DOI: 10.1063/5.0315756
Cited by: 0
References: 12

Abstract

Fast transient charge trapping in AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) was investigated using fast pulsed measurements. Two devices—with and without an Al0.08Ga0.92N back-barrier—were compared to evaluate the threshold voltage (Vt) instability under single-pulse stress from 1 ms to 1 s. The back-barrier device exhibited a slightly larger short-term Vt shift (

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Semiconductor materials and devices

Publication details

Journal / source
AIP Advances
Volume
16
Issue
3
Publication date
1 March 2026
Language
EN