Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

APL Electronic Devices 2026 Open access

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Authors: Kevin Nadaud, Zihao Lyu, Pedro Fernandes Paes Pinto Rocha, Daniel Alquier, Quentin Paoli, Julien Ladroue, Arnaud Yvon, Eric Frayssinet, Yvon Cordier, Jérôme Billoué
DOI: 10.1063/5.0319825
Cited by: 1
References: 17

Abstract

In this article, we study the effect of the doping level in the intermediate layer of a pseudo-vertical GaN-based p-i-n diode. By decreasing the doping level, from 1.1 × 1016 to 1.6 × 1014 cm−3, we show that the OFF-state capacitance can be reduced by a factor 2.2, without affecting the ON-state resistance too much, which is increased by only 16%. The main consequence is an increase in the cutoff frequency by a factor 1.8, from 137 ± 5 to 250 ± 16 GHz. The DC characteristics of the diode are preserved since no significant variation of the turn on voltage has been found and no breakdown occurs for up to −200 V biasing.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advanced Power Amplifier Design Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
APL Electronic Devices
Publisher
AIP Publishing
Volume
2
Issue
2
Publication date
13 April 2026
Language
EN