Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy

Applied Physics Letters 2026

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Authors: Huabin Yu, Shubham Mondal, Rui Shen, Md Tanvir Hasan, David He, Jiangnan Liu, Samuel Yang, Minming He, Omar Alkhazragi, D. M. Wang, M. Kira, Parag B. Deotare
+2 more Di Liang, Zetian Mi
DOI: 10.1063/5.0321511
Cited by: 2
References: 43

Abstract

Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we demonstrate an electrically pumped AlGaN-based laser diode operating in the UV-B band (280–315 nm). The device is grown by molecular beam epitaxy on a single-crystal AlN substrate and fabricated in a ridge-waveguide geometry. The laser diode operates at 298.5 nm and exhibits a relatively low threshold current density of 3.4 kA/cm2. Clear non-linear light–current characteristics and pronounced spectral narrowing with a full width at half maximum of 0.2 nm are measured above the threshold.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Acoustic Wave Resonator Technologies

Publication details

Journal / source
Applied Physics Letters
Publisher
AIP Publishing
Volume
128
Issue
14
Publication date
5 April 2026
Language
EN