Unraveling structural evolution in high-performance energy storage La-doped BaTiO3 superparaelectric relaxor ferroelectric ceramics

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Authors: Kai Dai, Kai Jiang, Anyang Cui, Zhen Hua Liu, Genshui Wang, Jun Wang, Zhigao Hu
Cited by: 1
References: 40

Abstract

Unraveling the doping- and temperature-dependent structural dynamics is pivotal for developing high-performance energy storage ceramics, yet the fundamental physical mechanisms governing these phenomena remain elusive. Here, we employ in situ polarized Raman spectra and spectroscopic ellipsometry to probe the structural evolution in La3+-doped BaTiO3 ceramics. A-site substitution by La3+ induces significant lattice distortions and generates oxygen vacancies, which disrupt long-range ferroelectric order and promote relaxor behavior, with the system ultimately evolving into a superparaelectric (SPE) state. These perturbations manifest spectroscopically as broadening and low-frequency shifts of Raman-active phonon, accompanied a lattice structural transition from tetragonal to pseudocubic symmetry. Spectroscopic ellipsometry demonstrates a systematic increase in the optical bandgap with La doping, attributed to the charge compensation mechanisms and the ionic size mismatch. The structural evolution from relaxor ferroelectric to SPE and finally to paraelectric phases with temperature is revealed by distinct anomalies in phonon frequencies, depolarization ratio, and optical bandgap, while the constructed phase diagram shows that La-doping suppresses critical transformation temperatures. Notably, the A1g phonon mode serves as a critical spectroscopic fingerprint for differentiating distinct structural evolution pathways. These studies present the systematical results on structural properties and optical/dielectric properties for BaTiO3-based ceramic, establishing a design paradigm for advanced lead-free energy storage ceramic.

Fields of Study & Subjects

Ferroelectric and Piezoelectric Materials Chemical and Physical Properties of Materials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Journal of Applied Physics
Publisher
AIP Publishing
Volume
139
Issue
7
Publication date
20 February 2026
Language
EN