AlxGa1 − xN (0.7 < x < 1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2
Abstract
High Al-content AlxGa1−xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (∼14 kA/cm2) and a high breakdown field of ∼8.3 MV/cm. The SBDs also exhibited low ideality factors of (η ∼ 1.2) with a high Schottky barrier height (Φb ∼ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Carbon Nanotubes in Composites
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- Applied Physics Letters
- Publisher
- AIP Publishing
- Volume
- 128
- Issue
- 13
- Publication date
- 30 March 2026
- Language
- EN