Wavelength- and intensity-tunable self-powered bipolar photodetectors based on a-Ga2O3 heterostructures for encrypted communication
Abstract
Bipolar photodetectors are promising for optical logic and communication but often suffer from structural complexity and high power consumption. Here, we report a self-powered, vertical photodetector based on an ITO/Au NPs/a-Ga2O3/Pt heterojunction. By leveraging Au nanoparticles to engineer interfacial oxygen vacancies and the synergistic modulation of the Schottky barrier by the light field, the device achieves a distinct bidirectional photoresponse at zero bias. Specifically, it exhibits wavelength-dependent polarity switching, generating positive photocurrent at 254 nm and negative at 310 nm. Notably, under 295 nm illumination, the device displays an anomalous intensity-dependent polarity reversal, transitioning from negative to positive as light intensity increases. We demonstrate the potential of these tunable features in optical logic gates and encrypted communication systems, offering a new pathway for multifunctional self-powered optoelectronics.
Fields of Study & Subjects
Ga2O3 and related materials
2D Materials and Applications
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Applied Physics Letters
- Publisher
- AIP Publishing
- Volume
- 128
- Issue
- 22
- Publication date
- 1 June 2026
- Language
- EN