Metal-modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices
Abstract
Scandium aluminum nitride (ScxAl1−xN) is attractive for novel quantum photonic applications due to the prospect of growing arbitrarily thick low-defect ScxAl1−xN/GaN heterostructures on c-plane GaN. While high-quality GaN growth by molecular-beam epitaxy (MBE) is performed under metal-rich conditions at substrate temperatures >700 °C, ScxAl1−xN undergoes phase segregation and roughening under these conditions. For this reason, MBE of Sc-containing nitrides has been typically done under nitrogen-rich conditions at relatively low substrate temperatures (
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Acoustic Wave Resonator Technologies
Metal and Thin Film Mechanics
Publication details
- Journal / source
- Applied Physics Letters
- Publisher
- AIP Publishing
- Volume
- 128
- Issue
- 21
- Publication date
- 25 May 2026
- Language
- EN