Electronic origins of dual emission in Mn-doped ZnSe quantum dots

AIP Advances 2026 Open access

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Authors: Thanh Dam Pham, Thanh Binh Dinh, Duy Manh Le, Thi Huyen Nguyen, Mạnh Hà Hoàng, T.Quynh Hoa Tran, Do Thi Anh Thu, Minh Tân Mẫn
DOI: 10.1063/5.0331862
Cited by: 1
References: 19

Abstract

Mn-doped ZnSe quantum dots were synthesized by a hot-injection method and exhibit phase-pure cubic structures with substitutional Mn incorporation. Density functional theory calculations reveal shallow Mn-induced impurity states and p–d hybridization near the valence band, enabling multiple excitation pathways. Optical measurements show band-edge absorption, Mn-related transitions, and dual photoluminescence from ZnSe and Mn2+ centers. A combined mechanism involving excitonic energy transfer, defect-assisted relaxation, and host-to-Mn charge transfer explains the observed optical behavior. These results establish a direct link between Mn-induced electronic modifications and the photophysics of ZnSe quantum dots.

Fields of Study & Subjects

Quantum Dots Synthesis And Properties Semiconductor Quantum Structures and Devices Silicon Nanostructures and Photoluminescence

Publication details

Journal / source
AIP Advances
Publisher
AIP Publishing
Volume
16
Issue
6
Publication date
1 June 2026
Language
EN