Comment on “Investigation of significantly high barrier height in Cu/GaN Schottky diode” [AIP Adv. 6, 015206 (2016)]

AIP Advances 2026 Open access

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Authors: Shrikant S. Channe

DOI: 10.1063/5.0334873

Cited by: 1

References: 7

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor materials and interfaces Ga2O3 and related materials

References 7