Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions

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Authors: Danial Shafizadeh, Misagh Ghezellou, Viktor Bobal, Lasse Vines, Jawad Ul‐Hassan, Valdas Jokubavičius, Nguyên Tiên Són, Ivan Gueorguiev Ivanov
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Abstract

In chlorine-implanted 4H-SiC, a photoluminescence (PL) band with four narrow zero-phonon lines (ZPLs) in the range of 1350–1540 nm, labeled Cl1–Cl4, is observed. Among these, two ZPLs in the telecom C-band, Cl1 and Cl2 at 1539.2 and 1533.3 nm, respectively, exhibit high Debye–Waller factors (∼59% and ∼41%, respectively). Optically detected magnetic resonance confirms that the Cl-related center is spin active and stable at room temperature with zero-field splitting in the range of 1.0–1.4 GHz. The combined favorable optical and spin properties and advantages of an industrially established SiC material suggest this Cl-related center to be a highly promising candidate for scalable quantum networks.

Fields of Study & Subjects

Diamond and Carbon-based Materials Research Silicon Carbide Semiconductor Technologies Silicon Nanostructures and Photoluminescence

Publication details

Journal / source
Applied Physics Letters
Volume
129
Issue
10
Publication date
7 September 2026
Language
EN