Experimental observation of Hall resistance in CrSb2 thin films at different temperatures

AIP Advances 2026 Open access

Read full text
Authors: Gaocheng Zhan, Lian Weng, Shiqi Li, Tao He, Lei Hu, Wenchang Wu, Ruhao Ye, Bangyu Liu, Shuhao Gu
DOI: 10.1063/6.0005150
Cited by: 1
References: 27

Abstract

We report the experimental observation of Hall resistance in antiferromagnetic semiconductor CrSb2 thin films at different temperatures. By preparing the antiferromagnetic semiconductor CrSb2 via magnetron sputtering and establishing the correlation between temperature, magnetic field, and Hall resistance, this work reveals the modulation of transport properties and the regulation mechanism in the antiferromagnetic semiconductor CrSb2, providing experimental basis for the design of temperature-sensitive spintronic devices based on CrSb2.

Fields of Study & Subjects

Heusler alloys: electronic and magnetic properties Topological Materials and Phenomena Advanced Thermoelectric Materials and Devices

Publication details

Journal / source
AIP Advances
Publisher
AIP Publishing
Volume
16
Issue
3
Publication date
1 March 2026
Language
EN