Wideband GaN HEMT Doherty power amplifier for 5G and satellite applications

In this paper, a Doherty Power Amplifier (DPA) for broadband Ka-band applications is designed and simulated utilising Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). The driver stage and single-stage Doherty output arrangement of the power amplifier are designed for optimum efficiency and small integration. The amplifier runs between 21 and 29 GHz, maintaining a constant gain of 21 dB across the spectrum and an exhausted power level of 33.2 dBm. It has excellent linearity and load modulation characteristics while maintaining a high power level of 32.8 dBm at 6 dB backing off (OBO). The power-added efficiency (PAE) shows excellent back-off performance, peaking at 23% and maintaining 22.7% efficiency even at 6 dB OBO. The design is well-suited for contemporary high-data-rate systems like 5 G and satellite communications, where both linearity and power efficiency are crucial, because to its wide bandwidth, high gain, and effective functioning under back-off. The amplifier’s potential for use in next-generation millimetre-wave front ends is highlighted by the driver stage’s presence, which guarantees sufficient drive levels while maintaining overall system compactness.