SiC MOSFET gate oxide degradation monitoring: a gate leakage current approach
Abstract
This paper deals with online measurement of degradation sensitive electrical parameters leading to a health monitoring approach for silicon carbide power MOSFETs. The gate leakage current IGSS is chosen as a key indicator of the silicon carbide MOSFET gate oxide degradation as it provides information on its gate dielectric breakdown time. Due to the low amplitude of gate leakage current, on-line measurement of IGSS presents critical challenges because of the high transient current flowing through the gate during normal operation time. This paper presents an improved estimation circuit from an already existing one using the gate driver circuit. The proposed circuit is characterised under various VGS conditions for different temperatures. Finally, the circuit is successfully tested on an electronic chopper circuit for various Pulse Width Modulation (PWM) signal duty cycles.
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- International Journal of Electronics
- Publisher
- Informa UK Limited
- Volume
- 113
- Issue
- 9
- Pages
- 1697–1716
- Publication date
- 4 March 2026
- Language
- EN