Radiation effects and annealing characteristics of bipolar-CMOS-DMOS rail-to-rail operational amplifier under 60 Co gamma-ray irradiation

Radiation and annealing experiments were conducted on a self-developed rail-to-rail operational amplifier (op-amp) fabricated using bipolar-CMOS-DMOS (BCD) technology. A systematic investigation was performed to examine the effects of the total ionizing dose (TID) at different dose rates and cumulative doses and the effects of post-annealing on the device characteristics. TID effects were tested under 60Co gamma-ray irradiation with high and low dose rates, whereas post annealing was performed at high and room temperatures. The results show that the quiescent current (Iq) exhibited the highest radiation sensitivity under all conditions. Under the same irradiation doses, the degradation of Iq was more severe at 0.1 rad(Si) s−1 low-dose-rate irradiation condition than that at 50 rad(Si) s−1, indicating that the devices also suffer from enhanced low-dose-rate sensitivity (ELDRS) effects.