The influence of radiation effects on the ideality factor of optoelectronic components

The trend toward the miniaturisation of optoelectronic (and electronic) components increases their susceptibility to the effects of ionising electromagnetic radiation (gamma radiation). Since optoelectronic systems are of great importance in nuclear facilities, where a reduced gamma radiation flux is present, their stability and reliable operation are of vital significance. In this study, commercial optoelectronic components were subjected to gamma radiation exposure. The investigation was conducted through experimental measurements and theoretical – numerical calculations. The parameter under investigation was the ideality factor. Experimental testing was performed under well-controlled laboratory conditions, with a measurement uncertainty of less than 5 V. The theoretical calculation of the ideality factor was carried out using linearisation and numerical methods. By comparing the experimental results with numerical – theoretical calculations, it was possible to reliably determine which theoretical approach for calculating the ideality factor provides higher accuracy.