Nonvolatile SRAM design with double-node upset self-recovery based on magnetic tunnel junctions and CMOS

Radiation effects triggered by space radiation have exerted adverse impacts on the performance and operational lifetime of contemporary electronic devices. Among the various radiation-induced issues, single-event upset (SEU) has emerged as one of the most critical challenges for advanced CMOS devices. With the continuous increase in circuit integration density, the probability of double-node upset (DNU) has risen significantly. As a widely researched spintronic component, the magnetic tunneling junction (MTJ) exhibits strong SEU tolerance, since it uses spin momentum to store and transport data. Here, a DNU-tolerant and nonvolatile static random-access memory (NVSRAM) design has been developed by integrating two perpendicular anisotropy MTJs. Hybrid MTJ/CMOS simulations demonstrated its self-recovery of DNU and nonvolatility with relatively smaller hardware area. Owing to its combined features of DNU resistance, nonvolatility, and structural stability, this MTJ-based DNU-tolerant NVSRAM holds great potential for application in aerospace electronic devices and other high-speed memory systems.