HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3

Science and Technology of Advanced Materials 2026 Open access

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Authors: Takayoshi Oshima, Yuichi Oshima

DOI: 10.1080/14686996.2026.2680969

Cited by: 1

References: 55

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates

References 55