Intersubband optical absorption in the GaN/AlN quantum wire with donor doping
Abstract
In this study, we investigate the optical absorption within the conduction subbands of a cylindrical GaN/AlN quantum wire. We analyse the optical absorption rate and the real part of the dielectric function for quantum wire (QWR) in the presence of donor-impurity states. The results cover that the density of states associated with free motion in the QWR structure leads to a lower optical absorption compared to the quantum dots, as evidenced by the optical spectra. This study advances the understanding of GaN/AlN heterostructures by offering a useful analysis of the optical properties of QWRs, especially under donor doping. As a result, the outcomes provide a clear evidence of the effect of semiconductor nanostructures on the optical properties of optoelectronic devices.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Plasmonic and Surface Plasmon Research
Boron and Carbon Nanomaterials Research
Publication details
- Journal / source
- The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
- Volume
- 106
- Issue
- 13-14
- Pages
- 1256–1268
- Publication date
- 7 January 2026
- Language
- EN