Hopping conduction in n -type CdTe and CdMgTe

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Authors: Yasutomo Kajikawa
Cited by: 0
References: 47

Abstract

The experimental data of the temperature-dependent Hall-effect measurements on single crystal samples of n-type CdTe reported in literature are analysed. As a result, the presence of nearest-neighbor hopping in n-type CdTe is revealed for the first time between the temperature ranges in which free-electron conduction and variable-range hopping conduction dominate, respectively. In particular, it is shown that nearest-neighbor hopping dominates the electrical conductivity, the Hall coefficient, and the Hall mobility even at such high temperatures as to be almost near room temperature. Furthermore, the analyses are performed for n-type CdMgTe samples with the Mg content lower than 0.35. It is shown for CdMgTe with the Mg content lower than 0.3 that the present model works well together with the material constants for CdMgTe calculated by the interpolation between CdTe and MgTe, whereas much larger values of the electron effective mass and the acoustic deformation potential are necessary for fitting the data on CdMgTe with the Mg content of 0.35.

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Semiconductor materials and interfaces Advanced Thermoelectric Materials and Devices

Publication details

Journal / source
The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
Volume
106
Issue
13-14
Pages
1269–1300
Publication date
28 January 2026
Language
EN