Multi-method determination of the critical magnetic field of the metal insulator transition in two-dimensional p-Si/SiGe/Si heterostructures
Abstract
In this study, we examine the Metal–Insulator Transition (MIT) in two-dimensional p-Si/SiGe/Si systems at very low temperatures (0.3–1.6 K) under magnetic fields up to 18 T. The main objective is to determine the critical field Bc marking the transition between metallic and insulating regimes. Electrical conductivity was analyzed using six complementary methods, each based on a distinct theoretical model. This multi-approach analysis provides reliable and consistent results, revealing Bc≈7.2T. The findings contribute to a deeper understanding of quantum transport phenomena and offer perspectives for spintronic and quantum semiconductor device applications.
Fields of Study & Subjects
Semiconductor materials and interfaces
Quantum and electron transport phenomena
Surface and Thin Film Phenomena
Publication details
- Journal / source
- Molecular Crystals and Liquid Crystals
- Volume
- 770
- Issue
- 4
- Pages
- 589–600
- Publication date
- 10 January 2026
- Language
- EN