Formation and electronic properties of octithiophene thin films on the Si(111)-√3×√3-Ag surface
Abstract
The monolayer formation and electronic properties of α-octithiophene (8 T) molecules on a Si(111)-√3×√3-Ag surface were investigated using scanning tunneling microscopy and spectroscopy (STM and STS). It was considered that 8 T molecules form a stable monolayer film only after the surface is sufficiently covered. STS measurements of the monolayer film revealed that the energy difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is 2.5–2.7 eV, consistent with previously reported values. STS results show no characteristic electronic states between the HOMO and LUMO, suggesting that the interaction between 8 T and the surface is physisorptive.
Fields of Study & Subjects
Surface Chemistry and Catalysis
Molecular Junctions and Nanostructures
Organic and Molecular Conductors Research
Publication details
- Journal / source
- Molecular Crystals and Liquid Crystals
- Volume
- 770
- Issue
- 6
- Pages
- 845–853
- Publication date
- 27 January 2026
- Language
- EN