ESR study of charge accumulation in organic photoelectrochemical transistors under gate-voltage sweeps
Abstract
Organic electrochemical transistors (OECTs) sensors enable strong signal amplification, and organic photoelectrochemical transistors (OPECTs) further embed quantum-dots (QDs) in gate-electrode to utilize photocurrent. Here, we employ operando electron spin resonance (ESR) spectroscopy to directly probe the charge-accumulation process in PEDOT:PSS-based OPECTs by sweeping the gate voltage (VG) under dark conditions. ESR signals from both PEDOT:PSS and QDs are detected. Especially, as VG is stepped positively, electrons accumulate in the QDs—evidenced by a concomitant increase in ESR intensity—and remain trapped until VG is driven negative. These findings elucidate the carrier dynamics microscopically by VG operation in OPECTs.
Fields of Study & Subjects
Conducting polymers and applications
Organic Electronics and Photovoltaics
Organic and Molecular Conductors Research
Publication details
- Journal / source
- Molecular Crystals and Liquid Crystals
- Volume
- 770
- Issue
- 6
- Pages
- 932–939
- Publication date
- 16 February 2026
- Language
- EN