Generation of homogeneous removal profile by sample rotation using a broad beam ion source

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Authors: Stephan Görsch, Andreas Nickel, Frank Frost
Cited by: 1
References: 19

Abstract

Abstract Ion beam etching processes play a central role in the process chain for manufacturing high-performance optical systems. These techniques are a necessary final processing step to reach a small shape deviation and roughness values below 0.1 nm. They are also a central processing step in the production of diffractive or refractive optics. Looking at these fields a clear trend towards sample diameters larger than 400 mm is visible. Since the diameter of the tool is much smaller compared to the size of the sample, a suitable motion strategy has to be found. This work presents and discusses a method for processing large-diameter samples while simultaneously minimizing the size of the processing machine system. A mathematical background is given and the simulation results are experimentally verified.

Fields of Study & Subjects

Ion-surface interactions and analysis Advanced Electron Microscopy Techniques and Applications X-ray Spectroscopy and Fluorescence Analysis

Publication details

Journal / source
Journal of Physics D Applied Physics
Publisher
IOP Publishing
Volume
59
Issue
3
Pages
035105–035105
Publication date
2 January 2026