Generation of homogeneous removal profile by sample rotation using a broad beam ion source
Abstract
Abstract Ion beam etching processes play a central role in the process chain for manufacturing high-performance optical systems. These techniques are a necessary final processing step to reach a small shape deviation and roughness values below 0.1 nm. They are also a central processing step in the production of diffractive or refractive optics. Looking at these fields a clear trend towards sample diameters larger than 400 mm is visible. Since the diameter of the tool is much smaller compared to the size of the sample, a suitable motion strategy has to be found. This work presents and discusses a method for processing large-diameter samples while simultaneously minimizing the size of the processing machine system. A mathematical background is given and the simulation results are experimentally verified.
Fields of Study & Subjects
Ion-surface interactions and analysis
Advanced Electron Microscopy Techniques and Applications
X-ray Spectroscopy and Fluorescence Analysis
Publication details
- Journal / source
- Journal of Physics D Applied Physics
- Publisher
- IOP Publishing
- Volume
- 59
- Issue
- 3
- Pages
- 035105–035105
- Publication date
- 2 January 2026