Effects of inductive and capacitive bias power on plasma parameters in inductively coupled radio frequency discharges

Abstract A two-dimensional particle-in-cell/Monte Carlo collision simulation is performed to investigate a low-pressure inductively coupled plasma (ICP) operated in Neon at 27.12 MHz with a 13.56 MHz radio frequency (RF) substrate bias. In agreement with experimental observations, the results reveal coupling mechanisms between inductive power dissipation ( P ICP ) and capacitive RF power dissipation caused by the substrate bias ( P CCP ), which affect process relevant plasma parameters. P ICP affects the sheath voltage and plasma current, influencing the ion energy and angular distribution function and plasma series resonance oscillations. Even low values of P CCP alter the electron heating, EEPF, and plasma density. A high P ICP / P CCP ratio enhances ion directionality. Increasing pressure decreases the ion flux but increases ion energy through enhanced sheath voltage.