Skyrmion manipulation and logic gate functionality in transition metal multilayers

Abstract Magnetic skyrmions, due to their topological stability and high mobility, are strong candidates for information carriers in spintronic devices. To advance their practical applications, a detailed understanding of their nucleation and current-driven dynamics is essential. We investigate the formation and manipulation of skyrmions in a square nano structure (200 × 200 nm 2 , 1 nm thick) of PdFe/Ir(111) multilayers subjected to nano second current pulses with magnitude ranging from 1×10 11 A m −2 − 5×10 11 A m −2 . Using micromagnetic simulations, we demonstrate controlled motion of skyrmions under different types of spin-transfer torque (STT). The calculated skyrmion Hall angle (SkH) for Slonczewski type STT is θ SkH SL = 89.57 ∘ for PdFe/Ir(111) multilayers which ensures the edge accumulation of skyrmion like a track within the nano structure and we extend this idea further for different shape engineering of skyrmion in 4d transition metal multilayers by manipulating the magnitude and direction of current pulses. Next, we investigate the influence of voltage-controlled magnetic anisotropy ranging from 1.4 × 10 6 J m −3 − 4.2 × 10 6 J m −3 with external magnetic field B e x t = 2 T, and 0 to 2.8 × 10 6 J m −3 with B e x t = 3 T respectively, on skyrmion dynamics for designing anisotropy-engineered barriers to guide their trajectories in PdFe/Ir(111) multilayers. We further use these barriers to implement basic logic operations, including OR and AND gates, with skyrmions representing binary states. The calculated SkH for Zhang-Li type STT in PdFe/Ir(111) multilayers is θ SkH ZL = 3.26 ∘ . Consequently, the skyrmions propagate predominantly along the direction of the applied current with minimal deflection, a feature that renders them highly suitable for logic operations.