Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions
Abstract
Abstract The interfacial oxidation level and thermodynamic properties of MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during RF sputtering, as well as on the thermal stability of the structure during post-growth annealing. The effect of ultrathin Mg insertion layers, and the discrepancies reported in the literature regarding their impact, are elucidated. Two distinct failure modes of the magnetoresistance are highlighted, involving the decay of perpendicular magnetic anisotropy (PMA) and the destruction of coherent tunneling channels, respectively. Through careful control of the interfacial oxidation level and proper selection of the heavy metal layers, both PMA and tunneling magnetoresistance of the junctions can be enhanced.
Fields of Study & Subjects
Magnetic properties of thin films
Physics of Superconductivity and Magnetism
ZnO doping and properties
Publication details
- Journal / source
- Journal of Physics D Applied Physics
- Publisher
- IOP Publishing
- Volume
- 59
- Issue
- 24
- Pages
- 245001–245001
- Publication date
- 21 May 2026
- Language
- EN