Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in silicon (110) with high- κ oxides
Abstract
Abstract The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si (110) systems. At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering at low inversion charge density and surface roughness scattering at high density, leading to a mobility peak. High- κ dielectrics such as HfO 2 introduce remote phonon scattering , which suppresses mobility. Under high electric fields, phonon emission dominates at 4 K, limiting velocity enhancement and resulting in limited current improvement.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Silicon and Solar Cell Technologies
Publication details
- Journal / source
- Journal of Physics D Applied Physics
- Volume
- 59
- Issue
- 24
- Pages
- 245107–245107
- Publication date
- 10 June 2026
- Language
- EN