Physical mechanisms of structural, morphological, and property changes in ZnS and ZnSe under electron irradiation

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Authors: M Yu Tashmetov, A V Belushkin, Bakhtiyar Madaminov, M.B. Tagaev
Cited by: 1
References: 90

Abstract

Abstract This work presents an analysis of the physical mechanisms of radiation-induced changes in the structural parameters, morphology, and properties of ZnS and ZnSe crystals irradiated with 2 MeV electrons at fluences ranging from 0.5 × 10 17 to 4.0 × 10 17 electrons cm −2 . The processes of defect formation (vacancies, interstitials, and dislocations) resulting from elastic (nuclear) and inelastic (electronic) collisions are analyzed. These processes lead to lattice compression, bandgap narrowing, and an increase in the Urbach energy with rising electron fluence, reflecting enhanced structural disorder, as well as to surface smoothing, higher microhardness, and intensification of the longitudinal optical phonon mode in the Raman spectra. Differences between ZnS and ZnSe are discussed with respect to the ionicity of chemical bonds and the defect dynamics influencing lattice relaxation. A conceptual physical model is proposed to explain the observed effects in ZnS and ZnSe, based on electron–phonon interactions and defect annihilation processes.

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Quantum Dots Synthesis And Properties Chalcogenide Semiconductor Thin Films

Publication details

Journal / source
Journal of Physics Condensed Matter
Publisher
IOP Publishing
Volume
38
Issue
5
Pages
055703–055703
Publication date
21 January 2026
Language
EN