Cross sections for electron scattering on Ga + ions

Abstract The relativistic convergent close-coupling method is applied to calculate cross sections for electron scattering on Ga + ions. Integrated excitation cross sections are presented for the ground 3 d 10 4 s 2 1 S 0 electronic state for incident energies between the first excitation threshold and 500 eV. Rate coefficients for these transitions are presented assuming a Maxwellian electron energy distribution. Estimates are presented for the integrated single ionisation cross section (ISICS) for scattering on the 4 s 2 1 S 0 and 4 s 4 p 3 P j ∘ states for j ∈ { 0 , 1 , 2 } , including direct ionisation from the 4 s , 4 p and 3 d electrons, and excitation autoionisation contributions from 3 d electrons. Mixed agreement was found between the present ISICS and existing data.