Understanding polaronic transport in complex oxides by combining precise synthesis and first-principles many-body theory

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Authors: F. Liu, Zhifei Yang, Yao Luo, Silu Guo, C. Zhang, Sooho Choo, Xiaotian Xu, Seung Gyo Jeong, Jitin Sathish Kumar, X. Wang, A. Mkhoyan, Marco Bernardi
+1 more Bharat Jalan
Cited by: 1
References: 52

Abstract

Abstract In complex oxides, charge carriers often couple strongly with lattice vibrations to form polarons–entangled electron–phonon quasiparticles whose transport properties remain difficult to characterize. Experimental access to intrinsic polaronic transport requires ultraclean samples, while theoretical description demands methods beyond low-order perturbation theory. Here, we show a predictive theory–experiment workflow to study polaron transport in complex oxides. Focusing on a prototypical polaronic oxide, anatase TiO 2 , we combine growth of high-quality oxygen-vacancy-doped films using hybrid molecular beam epitaxy with a first-principles electron–phonon diagrammatic Monte-Carlo (FEP-DMC) framework recently developed for accurate polaron predictions. Our films exhibit record-high electron mobility for anatase TiO 2 , in excellent agreement with FEP-DMC calculations conducted prior to experiment, which predict a room-temperature mobility of 45 ± 15 cm −2 V −1 s −1 and a mobility-temperature scaling of μ ∝ T −1.9 ± 0.077 . Microscopic analysis using scanning transmission electron microscopy and x-ray photoelectron spectroscopy reveals the role of oxygen vacancies in modulating transport at lower temperatures. FEP-DMC further provides quantitative insight into polaron formation energy, phonon cloud distribution, lattice distortion around the polaron, and the polaronic contribution to mobility. Together, these results provide a deeper microscopic understanding of large-polaron transport in a complex oxide and provide the blueprint to characterize other polaronic materials.

Fields of Study & Subjects

Electronic and Structural Properties of Oxides Chemical and Physical Properties of Materials Semiconductor materials and devices

Publication details

Journal / source
Reports on Progress in Physics
Publisher
IOP Publishing
Volume
89
Issue
2
Pages
028003–028003
Publication date
22 January 2026
Language
EN