Flexible 3C-SiC strain-sensing layers transferred from silicon substrates by mechanical exfoliation

Abstract Cubic silicon carbide (3C-SiC) exhibits outstanding properties, making it a promising material for flexible sensors and wearable devices. In this study, 3C-SiC films with a thickness of 2.3 μ m were grown on Si substrates using chemical vapor deposition, and flexible films were subsequently obtained through mechanical exfoliation. Characterization results revealed a distinct morphological difference between the as-grown surface and buried surface, which may be associated with the accumulated stress and the exfoliation process. The fabricated 3C-SiC film demonstrates excellent quality and strength, and electrical measurements further highlight its potential applications in strain sensors.