Effect of annealing temperature on the properties of CsPbBr 3 films and the performance of relevant photodetectors

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Authors: Zhicheng Su, Wenlei Yun, Xitao Guo, Zainab Zafar, Rongfeng Yi, Haiyan Nan
Cited by: 0
References: 53

Abstract

Abstract All-inorganic halide perovskites have received a significant attention in recent years for their remarkable optoelectronic properties and better environmental stability. Here, we report the development of large-area and continuous CsPbBr 3 micro/noncrystal films with orthorhombic phase using a centrifugal casting method. We also examine the impact of annealing temperature on the characteristics of CsPbBr 3 films and their function as photodetectors. A relatively high annealing temperature (150 °C) improves surface uniformity, crystallinity, and defect density in CsPbBr 3 films, as demonstrated by morphological, structural, and optical investigations. Furthermore, CsPbBr 3 films have been applied onto the interdigitated patterned Au electrodes, resulting in symmetrical photoconductive detectors. The photodetector annealed at 150 °C performed significantly better than the control device annealed at 50 °C, indicating enhanced film quality. According to photoresponse analysis, the optimized film photodetector exhibits a high responsivity of 1603 mA W −1 , a large specific detectivity of 6.4 × 10 12 Jones, and a fast response speed of 19/20 ms. These improved results suggest that the annealing temperature plays a crucial role in determining the quality of solution-processed perovskite films and the performance of their photodetectors.

Fields of Study & Subjects

Perovskite Materials and Applications Advanced Semiconductor Detectors and Materials Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Semiconductor Science and Technology
Volume
41
Issue
2
Pages
025011–025011
Publication date
1 February 2026