Stable high-temperature operation of ultra-wide bandgap Al-rich AlGaN HFET
Abstract
Abstract Wide- and ultra-wide bandgap semiconductors are key to realizing power devices that can operate under extreme conditions. In this work, we demonstrate that Al-rich AlGaN heterostructure field-effect transistors (HFETs) provide robust operation up to 300 °C. The devices exhibited stable electrical performance with minimal degradation in current and resistance, while maintaining nearly constant threshold voltage and exceptionally low gate leakage despite employing a Schottky gate. Furthermore, pulsed measurements confirmed the absence of current collapse even without surface passivation, highlighting suppressed trapping effects. These results establish Al-rich AlGaN HFETs as promising candidates for high-power and high-temperature applications.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Semiconductor Science and Technology
- Volume
- 41
- Issue
- 2
- Pages
- 025022–025022
- Publication date
- 1 February 2026
- Language
- EN