Trench p-IrO x / β -Ga 2 O 3 junction barrier Schottky diodes with low barrier tungsten Schottky contact

Semiconductor Science and Technology 2026

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Authors: Huichao Hu, Shengliang Cheng, Rui Xie, Rui Zhou, Xing Lü, Jun Liang, Gang Wang, Zimin Chen, Jian Li, Yanli Pei
DOI: 10.1088/1361-6641/ae46d1
Cited by: 0
References: 60

Abstract

Abstract We report a trench junction barrier Schottky (TJBS) diode constructed by integrating p-IrO x /n- β -Ga 2 O 3 heterojunctions with tungsten Schottky contacts. The electrical performance was compared with heterojunction PN diode, mesa Schottky barrier diode (MSBD), and junction termination extension MSBD (JTE-MSBD). By optimizing the structural design, the TJBS diodes achieve a low turn-on voltage of 0.52V and an ideality factor of 1.05, affirming exceptional interface quality. Due to the incorporation of pn-junction, the specific on-resistance ( R on,sp ) of TJBS is significantly decreased under high forward voltage. Notably, it delivers a reverse breakdown voltage of 1 kV, with an ultra-low reverse leakage current density (

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and interfaces Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Semiconductor Science and Technology
Volume
41
Issue
3
Pages
035008–035008
Publication date
17 February 2026
Language
EN