Atomic-layer deposited mid-infrared sensitive NbTiN superconducting nanowire single photon detectors

Abstract The advancement of superconducting nanowire single-photon detectors (SNSPDs or SSPDs) is intrinsically linked to breakthroughs in superconducting materials engineering. These detectors are prized for their excellent sensitivity and performance across a wide wavelength range, from ultra-violet to mid-infrared (mid-IR). Plasma-enhanced atomic layer deposition (ALD) is an advanced deposition technique that enables exceptional film uniformity across large wafers, making it ideal for a variety of applications. In this study, ALD NbTiN films are fabricated into SNSPDs that exhibit single-photon response across near- to mid-IR wavelengths. A 5 nm thick NbTiN film was patterned into devices consisting of ∼100 nm wide meandered nanowires, and the nanowire cross-section and composition were analysed by transmission electron microscopy. The devices were tested in a closed-cycle cryostat with a base temperature of 0.9 K. Photon detection rate and timing jitter were measured across the wavelength range 1.5–4.4 µ m under low dark count conditions, confirming single-photon sensitivity across the measured wavelength bands. This work introduces the ALD-grown NbTiN films as a new platform for SNSPD detectors, achieving mid-IR single-photon sensitivity. The intact film quality after fabrication demonstrates the potential of ALD processes for scalable infrared detector technologies.